[nilesh]

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Hi I would like to have the syllabus for the Electronic Devices & Circuits as well as the previous years question paper on the same required for reference purpose?

[Vishal Kotkar]

the syllabus for the Electronic Devices & Circuits as well as the previous years question paper on the same required for reference purpose has been provided below:

Syllabus for Electronic Devices & Circuits:

1. Semiconductor Diodes

2. Diodes The diode is a 2-terminal device. A diode ideally conducts in only one directionUpper Saddle River, New Jersey 07458 Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

3. Diode Characteristics Conduction Region Non-Conduction Region
• The voltage across the diode is 0 V • The current is infinite • The forward resistance is defined as RF = VF / IF • The diode acts like a short Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky • All of the voltage is across the diode • The current is 0 A • The reverse resistance is defined as RR = VR / IR • The diode acts like open

4. Semiconductor Materials Materials commonly used in the development of semiconductor devices: • Silicon (Si) • Germanium (Ge) • Gallium Arsenide (GaAs) All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

5. Doping The electrical characteristics of silicon and germanium are improved by adding materials in a process called doping. There are just two types of doped semiconductor materials: n-type p-type • n-type materials contain an excess of conduction band electrons. • p-type materials contain an excess of valence band holes. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

6. p-n Junctions One end of a silicon or germanium crystal can be doped as a p-type material and the other end as an n-type material. The result is a p-n junction. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

7. p-n Junctions At the p-n junction, the excess conduction-band electrons on the n-type side are attracted to the valence-band holes on the p-type side. The electrons in the n-type material migrate across the junction to the p-type material (electron flow). The electron migration results in a negative charge on the p-type side of the junction and a positive charge on the n-type side of the junction. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky The result is the formation of a depletion region around the junction.

8. Diode Operating Conditions A diode has three operating conditions: • No bias • Forward bias • Reverse bias. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

9. Diode Operating Conditions No Bias • No external voltage is applied: VD = 0 V • No current is flowing: ID = 0 A • Only a modest depletion region exists. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

10. Diode Operating Conditions Reverse Bias External voltage is applied across the p-n junction in the opposite polarity of the p- and n-type materials. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky • The reverse voltage causes the depletion region to widen. • The electrons in the n-type material are attracted toward the positive terminal of the voltage source. • The holes in the p-type material are attracted toward the negative terminal of the voltage source.

Electronic Devices & Circuits Question Paper of CUSAT