| December 7th, 2020 11:41 AM | |
| prince karak | Sathyabama Institute of Science and Technology M.Tech - VLSI SECA5104 Modelling and Simulation of MOS Devices Syllabus Sathyabama Institute of Science and Technology M.Tech - VLSI SECA5104 Modelling and Simulation of MOS Devices Syllabus SATHYABAMA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL OF ELECTRICAL AND ELECTRONICS ENGINEERING SECA5104 MODELING AND SIMULATION OF MOS DEVICES (FOR VLSI) L T P Credits Total Marks 3 0 0 3 100 UNIT 1 FUNDAMENTALS OF MOS DEVICE 9 Hrs. Characteristics of a MOS transistor- Small Signal model of MOSFET - High frequency Limitations - Mathematical model of IV characteristics - Drift Velocity and Drift Current: Quantitative analysis - Secondary effects - Energy band diagram and band bending-Calculation of the threshold voltage (vt) - Significance of threshold voltage - Non ideal effects- CV plots: High frequency CV plots - low Frequency CV plots - Mathematical analysis of CV plots. UNIT 2 RADIATION AND INTERFACE TRAP CAPACITANCE 9 Hrs. Dose - Drain current due to photo generated carriers– Sources of oxide trapped charge - radiation created oxide trapped charge and its annealing - Shifts in threshold voltage in P channel and N channel MOSFET - Shifts at dynamic bias - radiation hardening - Interface traps - Cit - Effect of AC signal on the interface states - Techniques to measure Cit. UNIT 3 DOPING AND SMALL GEOMETRY EFFECTS 9 Hrs. Doping Profiles - Non uniform doping and effect on threshold voltage- Sub threshold region - Id in the sub threshold region of operation- Short channel effect - Narrow width effect - Shrink and Scaling - NMOS versus PMOS Devices- MOS Device Layout. UNIT 4 SPICE MODEL PARAMETERS AND ANALYSIS 9 Hrs. MOSFET Model Parameters: SPICE level 1, level 2, level 3, level 4, level 5, level 6, level 7 and BSIM – Types of Analysis: AC-DC-TF- Frequency - Noise -Transient - Parametric - Sensitivity - Temperature - Worst-case - Monte Carlo Sub circuit. UNIT 5 ADVANCED DEVICES 9 Hrs. Basics of Structure and Operation: UMOS, VMOS, MESFET, MODFET, CNTFET, FinFET and GNRFET, MOS Device applications: Resistor-Switch-Static protection, Device scaling and change in properties of the device. Max. 45 Hrs. COURSE OUTCOMES On completion of the course, student will be able to CO1 - Understand the basics of MOS modeling. CO2 - Deep insight into device dynamics. CO3 - Comprehensive idea about small geometry effects. CO4 - Understanding the simulation of the device. CO5 - Knowledge about the advanced devices operation. CO6 - Idea about the applications of the devices. TEXT / REFERENCE BOOKS 1. Ramakant A Gayakwad, "Operational Amplifiers & Linear Integrated Circuits", Prentice Hall, 2000. 2. Joseph J. Carr& John M. Brown, "Introduction to Biomedical Equipment Technology", 4th Edition, Pearson Education Pvt. Ltd, 2001. 3. Roy Choudhary, "Linear Integrated Circuits", 2nd Edition, New Age International (P) Ltd, 2004. 4. John P. Bentley, "Principles of Measurement System", 3rd Edition, Longman Science & Technology,1995. 5. Jacob Millman, "Micro Electronics", McGraw Hill, 1987. 6. Robert Cough Lin and Fredrer, "Operational Amplifiers & Linear Integrated Circuits", Prentice Hall, 2001. END SEMESTER EXAMINATION QUESTION PAPER PATTERN Max. Marks: 100 Exam Duration: 3 Hrs. PART A: 5 Questions of 6 Marks each – No choice 30 Marks PART B: 2 Questions from each unit of internal choice, each carrying 14 Marks 70 Marks |
